reverse leakage current
英 [rɪˈvɜːs ˈliːkɪdʒ ˈkʌrənt]
美 [rɪˈvɜːrs ˈliːkɪdʒ ˈkɜːrənt]
网络 反向漏电流; 反向漏电电流; 反向漏電流
双语例句
- Analysis of reverse leakage current mechanisms in hg_ ( 1-x) cd_xte photodiodes
Hg（1-x）CdxTe光电二极管反向漏电机制分析 - The I V characteristics have also been measured. At room temperature, the forward turn on voltage is 0.8 V, the reverse breakdown voltage is higher than 200 V, and the leakage current is smaller than 10-10 A.
同时测试分析了该器件的IV特性：在室温下，正向开启电压为0.8V，反向击穿电压大于200V，反向漏电流小于10-10A； - High Sensitivity Measurement of Reverse Leakage Current of Semiconductor Devices
半导体器件反向漏电流的高灵敏度测量 - Unfortunately, though the lifetime control technology reduces the stored charge, it increases the forward voltage drop ( Vf) and the reverse leakage current ( Ir).
然而，少子寿命控制技术在减少存贮电荷（Qs）的同时，也增大了正向通态压降（Vf）和反向漏电流（Ir）； - It is pointed out in this paper that the problems about the non-linearity of piezoresistors, electric drift of the offset and reverse leakage current were omitted in characterization of pressure sensors, but they have great influence upon the quality of pressure sensors.
指出过去在标征压力传感器的指标时，忽略了力敏电阻的非线性、零点电漂移、反向漏电流，但是这些问题对压力传感器的质量却有很大的影响； - After pre-metallization processing of AlGaN/ GaN heterostructure with O_2 plasma and HF solution, the Ni/ Au Schottky contact characteristics were improved obviously and reverse leakage current reduced by three orders.
采用O2等离子体及HF溶液对AlGaN/GaN异质结材料进行表面处理后，Ni/Au肖特基接触特性比未处理有了明显改善，反向泄漏电流减小3个数量级。 - With the increase of substrate temperature, the dielectric constant increases but the dielectric dissipation, the forward and reverse leakage current density all increase, while the breakdown strength decreases.
实验表明，随着沉积温度的升高，薄膜的介电常数、介电损耗、正反向漏电流密度增加，击穿场强下降。 - In addition, an expression to show the relation between thermal drift of the offset and the reverse leakage current is presented, which is different from the traditional one.
讨论了造成力敏电阻非线性、电漂移、漏电流的各种因素，还提出一个表明零点热漂移和反向漏电流之间与传统公式不同的关系式。 - We analyzed the mechanism of the reverse leakage current for Ni-salicide shallow junction and studied the effect of the different process condition on the reverse leakage current.
分析了Ni-Salicide浅结反向漏电流产生的机理，研究了不同的工艺条件对浅结反向漏电流的影响。 - The Problems About Electric Drift of the Offset and Reverse Leakage Current for Pressure Sensors
压力传感器的零点电漂移与反向漏电问题 - The effects on I-V characteristics observed in the Schottky diodes indicated that even a light-dose irradiation would obviously reduce the reverse breakdown voltage but slightly enlarge the reverse leakage current.
通过Ⅰ-Ⅴ测试技术，观察到在1MeV的小注量电子辐照后，GaN肖特基二极管的电流&电压特性退化，击穿电压明显减小，反向漏电流逐渐增大。 - Various manufacturers will set aside a certain percentage of sample tubes under high temperature reverse bias leakage current test, that is, anti-bias temperature aging test.
各个厂家会抽取一定比例的样管进行高温反偏下漏电流测试，即高温反偏老化试验。